80N80-VS mos管、场效应管

80V/80A N-Channel Advanced Power MOSFET

Features

♦Low On-Resistance ♦Fast Switching ♦ 100% Avalanche Tested ♦ Repetitive Avalanche Allowed up to Tjmax ♦Lead-Free, RoHS Compliant ♦

Description

80N08ATD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Power supply applications.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.

Symbol Parameter Rating Unit

Common Ratings (TC=25°C Unless Otherwise Noted) V

Gate-Source Voltage ±20 V GS

Maximum Junction Temperature 150 °C TJ

T Storage Temperature Range -55 to 150 °C STG

Diode Continuous Forward Current 80 A TC=25°C IS

Mounted on Large Heat Sink

IDM 320 A Pulse Drain Current Tested TC=25°C 80 TC=25°C

IContinuous Drain Current (VGS=10V) A D

64 TC=100°C

260 W TC=25°C

PD Maximum Power Dissipation

140 W TC=100°C

Thermal Resistance-Junction to Case 0.80 °C/W RθJC

R

Thermal Resistance Junction-Ambient 62.5 °C/W θJA

Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 800 mJ

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Absolute Maximum Ratings

上海万芯电子科技有限公司Ｓｈａｎｇｈａｉ　ＷａｎＸｉｎ　Ｔｅｃｈｎｏｌｏｇｙ　ａｎｄ　Ｅｌｅｃｔｒｏｎｉｃ　Ｃｏ．．Ｌｔｄ80N08ATD

80V/80A N-Channel Advanced Power MOSFET

Symbol Parameter Condition

Min Typ Max Unit Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)

V(BR)DSS IDSS IGSS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current(Tc=25℃) Zero Gate Voltage Drain Current(Tc=125℃) Gate-Body Leakage Current Gate Threshold Voltage

Drain-Source On-State Resistance Forward Transconductance

VGS=0V ID=250μA 80 -- -- V VDS=80V,VGS0V -- -- 1 =μA =μA VDS=80V,VGS0V -- -- 10 VGS=±20V,V=DS0VVDS=VGS,ID=250μA

-- -- ±100 nA 2 3 4 V VGS(TH) RDS(ON)

VGS=10V, I=mΩ D40A -- 8 11 D35A -- 28 -- =S VDS= 50V, I

gfs

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)

Ciss Coss Crss Qg Qgs Qgd

Input Capacitance Output Capacitance

Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge

VDS=40V,ID=40A, VGS=10V VDS=40V,VGS=0V, f=1MHz

-- --

3300 430

-- --

pF pF

-- 160 -- pF -- --

85 16

-- --

nC nC

-- 22 -- nC Switching Characteristics

td(on) tr td(off) tf

Turn-on Delay Time

VDD=40V,

Turn-on Rise Time Turn-Off Delay Time Turn-Off Fall Time

ID=1A, RG=5Ω, VGS=10V

-- -- -- --

45 25 73 35

-- nS -- nS -- nS -- nS Source- Drain Diode Characteristics

ISD VSD trr

Notes:

Source-Drain Continuous Current Forward on voltage， Tj=25℃, Reverse Recovery Time， Tj=25℃

Tc=25℃ -- -- 80 A ISD=35A,V=1.3 V GS0V -- -- ,IF=40A,VDD=25V di/dt=100A/μs

-- 65 -- nS 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2.Starting TJ=25℃,L=0.5mH,RG=25Ω,ID=40A,VGS=10V

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上海万芯电子科技有限公司Ｓｈａｎｇｈａｉ　ＷａｎＸｉｎ　Ｔｅｃｈｎｏｌｏｇｙ　ａｎｄ　Ｅｌｅｃｔｒｏｎｉｃ　Ｃｏ．．Ｌｔｄ80N08ATD

80V/80A N-Channel Advanced Power MOSFET

Electrical Characteristics

A)( tnerurC niarD - DI.

Tj - Junction Temperature (°C)

Fig1. Drain Current Vs Junction Temperature

A)( tnerurC niarD - DIVDS - Drain-Source Voltage (V) Fig3. Output Characteristics V)(egatloV dlohserhT etaG dezilamroN

Tj - Junction Temperature (°C)

Fig5. Normalized Gate Threshold Voltage Current Vs Junction Temperature

）W（rewoP-totPTj - Junction Temperature (°C) Fig2.Power Dissipation

Ω)m( ecnatsiseR - nO -)NO(SDR

IDS - Drain-Source Current (A) Fig4. RDS(ON) Vs. IDS Curve

A)( tnerurC niarD - DIGate Voltage (V)

Fig6. Transfer characteristics

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上海万芯电子科技有限公司Ｓｈａｎｇｈａｉ　ＷａｎＸｉｎ　Ｔｅｃｈｎｏｌｏｇｙ　ａｎｄ　Ｅｌｅｃｔｒｏｎｉｃ　Ｃｏ．．Ｌｔｄ80N08ATD

80V/80A N-Channel Advanced Power MOSFET

Electrical Characteristics

SSDBV dezilamroNTj - Junction Temperature (°C)

Fig7. Normalized BVDSS vs Temperature

V） （ egatlov ecruoS-etaG

Gate charge （nC）

Fig9. Gate Charge VS Gate-Source voltage

Fig11.Avalanche Test Circuit and Waveforms

）Fpe（cnaticapaCVDS - Drain-Source Voltage (V) Fig8. Capacitance variations

N)O(SDR dezilamroNTj - Junction Temperature (°C) Fig10. RDS(ON) VS Junction Temperature

Fig12.Switching Time Test Circuit and

Waveforms

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上海万芯电子科技有限公司Ｓｈａｎｇｈａｉ　ＷａｎＸｉｎ　Ｔｅｃｈｎｏｌｏｇｙ　ａｎｄ　Ｅｌｅｃｔｒｏｎｉｃ　Ｃｏ．．Ｌｔｄ80N08ATD

80V/80A N-Channel Advanced Power MOSFET

TO-263 Package Outline

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