SGW25N120

Fast IGBT in NPT-technology

• 40% lower Eoff compared to previous generation• Short circuit withstand time – 10 µs• Designed for:

- Motor controls- Inverter- SMPS

• NPT-Technology offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour- parallel switching capability

CGEP-TO-247-3-1(TO-247AC)• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/TypeSGW25N120Maximum RatingsParameter

Collector-emitter voltageDC collector currentTC = 25°CTC = 100°C

Pulsed collector current, tp limited by TjmaxTurn off safe operating areaVCE ≤ 1200V, Tj ≤ 150°CGate-emitter voltage

Avalanche energy, single pulse

IC = 25A, VCC = 50V, RGE = 25Ω, start at Tj = 25°CShort circuit withstand timePower dissipationTC = 25°C

Operating junction and storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

Tj , Tstg--55...+150260

°C

1)

VCE1200V

IC25A

Eoff2.9mJ

Tj150°C

PackageTO-247AC

Ordering CodeQ67040-S4277

SymbolVCEIC

Value12004625

UnitVA

ICpuls-VGEEAStSCPtot

8484±2013010313

VmJµsW

VGE = 15V, 100V ≤VCC ≤1200V, Tj ≤ 150°C

1)

Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Jul-02

Power Semiconductors

SGW25N120

Thermal ResistanceParameterCharacteristic

IGBT thermal resistance,junction – caseThermal resistance,junction – ambient

Electrical Characteristic, at Tj = 25 °C, unless otherwise specifiedParameter

Static Characteristic

Collector-emitter breakdown voltageCollector-emitter saturation voltage

V(BR)CESVGE=0V,

IC=1500µAVCE(sat)

VGE = 15V, IC=25ATj=25°CTj=150°C

Gate-emitter threshold voltageZero gate voltage collector current

VGE(th)ICES

IC=1000µA,VCE=VGE

VCE=1200V,VGE=0VTj=25°CTj=150°C

Gate-emitter leakage currentTransconductanceDynamic CharacteristicInput capacitanceOutput capacitance

Reverse transfer capacitanceGate charge

Internal emitter inductance

measured 5mm (0.197 in.) from caseShort circuit collector current

1)

SymbolRthJCRthJA

ConditionsMax. Value

0.4

UnitK/W

TO-247AC40

SymbolConditions

Value

min.1200

typ.-max.-

Unit

V

2.5-3

3.13.74

3.64.35

µA

--- ------

---20215016011022513240

3501400100-2600190130300--nCnHAnASpF

IGESgfsCissCossCrssQGateLEIC(SC)

VCE=0V,VGE=20VVCE=20V, IC=25AVCE=25V,VGE=0V,f=1MHz

VCC=960V, IC=25AVGE=15VTO-247AC

VGE=15V,tSC≤10µs100V≤VCC≤1200V,Tj ≤ 150°C

1)

Allowed number of short circuits: <1000; time between short circuits: >1s.

2

Jul-02

Power Semiconductors

SGW25N120

Switching Characteristic, Inductive Load, at Tj=25 °CParameter

IGBT CharacteristicTurn-on delay timeRise time

Turn-off delay timeFall timeTurn-on energyTurn-off energyTotal switching energy

td(on)trtd(off)tfEonEoffEts

Tj=25°C,

VCC=800V,IC=25A,VGE=15V/0V,RG=22Ω,1)

Lσ=180nH,1)

Cσ=40pF

Energy losses include“tail” and diodereverse recovery.

-------4540730302.21.53.7

6052950392.92.04.9

mJns

Symbol

Conditions

Value

min.

typ.

max.

Unit

Switching Characteristic, Inductive Load, at Tj=150 °CParameter

IGBT CharacteristicTurn-on delay timeRise time

Turn-off delay timeFall timeTurn-on energyTurn-off energyTotal switching energy

td(on)trtd(off)tfEonEoffEts

Tj=150°CVCC=800V,IC=25A,

VGE=15V/0V,RG=22Ω,1)

Lσ=180nH,1)

Cσ=40pF

Energy losses include“tail” and diodereverse recovery.

-------5036820423.82.96.7

6043990504.63.88.4

mJns

Symbol

Conditions

Value

min.

typ.

max.

Unit

1)

Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.

Power Semiconductors

3Jul-02

100A

IcT80A

NRERUC 60A

RTC=80°COTCLELO40A

CT C=110°C,CI20A

Ic0A10Hz

100Hz1kHz10kHz100kHzf, SWITCHING FREQUENCY

Figure 1. Collector current as a function ofswitching frequency

(Tj ≤ 150°C, D = 0.5, VCE = 800V,VGE = +15V/0V, RG = 22Ω)

350W300WN250WOITPAIS200WISD REW150WOP,to100WtP50W0W25°C

50°C

75°C

100°C

125°C

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a functionof case temperature(Tj ≤ 150°C)Power Semiconductors

SGW25N120

100A

tp=1µs15µsTNµRE10A

50sRUC200µs ROTC1msLE1A

LOC ,CIDC0.1A

1V10V100V1000V

VCE, COLLECTOR-EMITTER VOLTAGEFigure 2. Safe operating area(D = 0, TC = 25°C, Tj ≤ 150°C)

60A

50A

TNRE40A

RUC RO30A

TCLELOC20A

,CI10A

0A

25°C

50°C75°C100°C125°C

TC, CASE TEMPERATURE

Figure 4. Collector current as a function ofcase temperature

(VGE ≤ 15V, Tj ≤ 150°C)

4Jul-02

SGW25N120

80A70A60A

80A70A60A

IC, COLLECTOR CURRENT50A40A30A20A10A0A0V

15V13V11V 9V 7VIC, COLLECTOR CURRENTVGE=17VVGE=17V15V13V11V 9V 7V50A40A30A20A10A0A0V

1V2V3V4V5V6V7V1V2V3V4V5V6V7V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics(Tj = 25°C)VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristics(Tj = 150°C)

70A60A

VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE80A

6V

5V

IC=50AIC, COLLECTOR CURRENT50A40A30A20A10A0A3V

4V

IC=25AIC=12.5ATj=+150°CTj=+25°CTj=-40°C3V

2V

1V

4V5V6V7V8V9V10V11V

0V

-50°C

0°C50°C100°C150°C

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristics(VCE = 20V)

Tj, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

saturation voltage as a function of junctiontemperature(VGE = 15V)

Power Semiconductors

5Jul-02

1000ns

td(off)ESIMT GNtIHC100ns

fTIWS ,ttd(on)tr10ns

0A20A40A60A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as afunction of collector current(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, RG = 22Ω,dynamic test circuit in Fig.E )1000ns

td(off)ESIMT GNIH100ns

CTIWtSd(on) ,ttrtf10ns

-50°C

0°C50°C100°C150°C

Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as afunction of junction temperature(inductive load, VCE = 800V,

VGE = +15V/0V, IC = 25A, RG = 22Ω,dynamic test circuit in Fig.E )

Power Semiconductors

SGW25N120

1000ns

td(off)ESIMT GNIHC100ns

TIWtd(on)S t,fttr10ns

0Ω

10Ω20Ω30Ω40Ω50Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as afunction of gate resistor(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, IC = 25A,dynamic test circuit in Fig.E )

6V

GETA5V

LO VDLO4V

max.HSREHT 3V

typ.RTETIME2V

min.-ETAG ,)h1V

t(EGV0V

-50°C

0°C50°C100°C150°C

Tj, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltageas a function of junction temperature(IC = 0.3mA)

6Jul-02

25mJ

*) Eon and Ets include lossesdue to diode recovery.Ets*ES20mJSOSL GY15mJ

ERon*NEE GNI10mJ

HCTIWEoffS ,E5mJ

0mJ

0A20A40A60A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy lossesas a function of collector current(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, RG = 22Ω,dynamic test circuit in Fig.E )8mJ

*) Eon and Ets include lossesdue to diode recovery.Ets*ES6mJ

SOSL GYRNE4mJ

Eon* EGNIHCTEIoffWS2mJ

,E0mJ-50°C

0°C50°C100°C150°C

Tj, JUNCTION TEMPERATURE

Figure 15. Typical switching energy lossesas a function of junction temperature(inductive load, VCE = 800V,

VGE = +15V/0V, IC = 25A, RG = 22Ω,dynamic test circuit in Fig.E )

Power Semiconductors

SGW25N120

10mJ

*) Eon and Ets include lossesdue to diode recovery.Ets*8mJ

ESSOSL GY6mJ

RNEEon*E GNI4mJ

EHoffCTIWS ,E2mJ

0mJ

0Ω10Ω20Ω30Ω40Ω50Ω

RG, GATE RESISTOR

Figure 14. Typical switching energy lossesas a function of gate resistor(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, IC = 25A,dynamic test circuit in Fig.E )

D=0.5CENDAPE10-1

K/W0.2IM L0.1ARMHE0.05TR,(K/W)τ, (s) TN0.074170.4990EI10-2

K/W0.020.208990.08994NS0.080650.00330RA0.010.036810.00038T ,R1R2CJhtZsingle pulseC1=τ1/R1C2=τ2/R210-3

K/W

1µs

10µs

100µs

1ms

10ms100ms

1s

tp, PULSE WIDTH

Figure 16. IGBT transient thermal

impedance as a function of pulse width(D = tp / T)

7Jul-02

20V

GE15V

TALOV RETT10V

IUEMCE=960V-ETAG ,EG5V

V0V0nC

100nC200nC300nC

QGE, GATE CHARGE

Figure 17. Typical gate charge(IC = 25A)

30µsME25µs

IT DNTA20µs

HSTIW T15µs

IUCRIC T10µs

ROHS ,c5µs

st0µs10V

11V12V13V14V15V

VGE, GATE-EMITTER VOLTAGE

Figure 19. Short circuit withstand time as afunction of gate-emitter voltage(VCE = 1200V, start at Tj = 25°C)Power Semiconductors

SGW25N120

CissCE1nF

NATICAPCA ,CCoss100pF

Crss0V

10V

20V

30V

VCE, COLLECTOR-EMITTER VOLTAGEFigure 18. Typical capacitance as afunction of collector-emitter voltage(VGE = 0V, f = 1MHz)

500A

TNRER400A

UC ROTC300A

LELOC TIUC200A

RIC TROH100A

S ,)cs(CI0A10V

12V14V16V18V20V

VGE, GATE-EMITTER VOLTAGE

Figure 20. Typical short circuit collectorcurrent as a function of gate-emitter voltage(100V≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C)

8Jul-02

TO-247ACPower Semiconductors

9SGW25N120

dimensions

symbol

[mm][inch]

min

maxmin

maxA4.785.280.18820.2079B2.292.510.09020.0988C1.782.290.07010.0902D1.091.320.04290.0520E1.732.060.06810.0811F2.673.180.10510.1252G0.76 max0.0299 max

H20.8021.160.81890.8331K15.6516.150.61610.6358L5.215.720.20510.2252M19.8120.680.77990.8142N3.5604.9300.14020.1941∅P

3.610.1421

Q

6.12

6.22

0.2409

0.2449

Jul-02

SGW25N120

i,vdiF/dttrr=tS+tFQrr=QS+QFtrrIF tSQStF10% IrrmtVRIrrmQFdirr /dt90% IrrmFigure C. Definition of diodesswitching characteristics

τ1Tj(t)p(t)r1r2τ2τnrnr1r2rnFigure A. Definition of switching times

TCFigure D. Thermal equivalentcircuitFigure B. Definition of switching losses

Figure E. Dynamic test circuitLeakage inductance Lσ=180nH,and stray capacity Cσ=40pF.

Power Semiconductors

10Jul-02

SGW25N120

Published by

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Power Semiconductors

11Jul-02