Wafer

专利名称：Wafer

发明人：ク テヒョン,チェ サンゾン,イ ドンジュン,コ ヨン

ソン

申请号：JP2014251672申请日：20141212公开号：JP6663160B2公开日：20200311

摘要：PROBLEM TO BE SOLVED: To provide a method for manufacturing a waferincluding a laser mark which does not cause a process failure, and a wafer manufacturedby the method.SOLUTION: A method for manufacturing a wafer includes: a step S10 ofpreparing a wafer with a known crystal orientation; a step S20 of forming at least one firstmark having a first depth in the wafer; a step S30 of polishing a surface of the wafer; and astep S40 of forming at least one second mark having a second depth shallower than thefirst depth in the wafer. The step of polishing the surface of the wafer includes a step ofremoving the surface on which the first mark is formed in a first thickness smaller thanthe first depth. The second mark is formed so as to separate from the first mark. Thewafer includes a front surface, a rear surface, and a side surface. The first mark and thesecond mark are respectively formed on at least one of the front surface, the rearsurface, and the side surface.

申请人：サムスン エレクトロニクス カンパニー リミテッド

地址：大韓・１６６７７・キョンギ－ド・スウォン－シ・ヨントン－ク・サムスン－ロ・１２９

国籍：KR

代理人：特許業務法人共生国際特許事務所

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