专利名称：Semiconductor device with plating wiring
connecting IC electrode pad to terminal
发明人：Hiroyuki Nakanishi,Toshiya Ishio,Katsunobu
Mori
申请号：US10269074申请日：20021011公开号：US06784528B2公开日：20040831
专利附图：
摘要：In order to simplify a providing method of a wiring that electrically connects asemiconductor integrated circuit to a substrate, the semiconductor integrated circuit that
is covered with an insulating layer except for an electrode area having an electrode pad isfixed on a formation side of the substrate having a terminal connected to the
semiconductor integrated circuit so that the electrode pad is exposed. Next, a metallicthin film is provided on a wiring area on which a wiring for electrically connecting theelectrode pad to the terminal is provided. Further, the wiring is provided on the metallicfilm of the wiring area in accordance with plating.
申请人：SHARP KABUSHIKI KAISHA
代理机构：Nixon & Vanderhye P.C.
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