Microelectronic substrates with integrated devices

专利名称：Microelectronic substrates with integrated

devices

发明人：Quat T. Vu,Jian Li,Steven Towle申请号：US09884595申请日：20010618

公开号：US20020020898A1公开日：20020221

专利附图：

摘要：A microelectronic substrate including at least one microelectronic devicedisposed within an opening in a microelectronic substrate core, wherein an encapsulationmaterial is disposed within portions of the opening not occupied by the microelectronic

devices, or a plurality microelectronic devices encapsulated without the microelectronicsubstrate core. At least one conductive via extended through the substrate, which allowselectrical communication between opposing sides of the substrate. Interconnectionlayers of dielectric materials and conductive traces are then fabricated on themicroelectronic device, the encapsulation material, and the microelectronic substratecore (if present) to form the microelectronic substrate.

申请人：VU QUAT T.,LI JIAN,TOWLE STEVEN

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