Semiconductor device structure for anti-fuse

专利名称：Semiconductor device structure for anti-fuse发明人：Yuan-Feng Chen申请号：US11785370申请日：20070417公开号：US07741697B2公开日：20100622

专利附图：

摘要：The present invention discloses a semiconductor device, the device comprising asemiconductor layer on a substrate. A gate oxide and a gate electrode are formed on thesemiconductor substrate. A gate conductive layer is formed on the gate electrode. A firstdoped region is formed in the semiconductor layer. A dielectric spacer is optionally

formed onto the sidewall of the gate electrode and part of the semiconductor layer. Asecond doped region is formed from a predetermined distance to the gate electrode,wherein the predetermined distance is no less than the distance between the first dopedregion and the gate electrode. A third doped region is formed adjacent to the firstdoped region in the semiconductor layer and between the first doped region and thesecond doped region.

申请人：Yuan-Feng Chen

地址：Hsinchu TW

国籍：TW

代理机构：Muncy, Geissler, Olds & Lowe, PLLC

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