SEMICONDUCTOR STRUCTURES AND FABRICATION METHODS T

专利名称：SEMICONDUCTOR STRUCTURES AND

FABRICATION METHODS THEREOF

发明人：HAIYANG ZHANG,CHENGLONG ZHANG申请号：US14848802申请日：20150909

公开号：US20160118338A1公开日：20160428

专利附图：

摘要：A method for forming a semiconductor structure including providing asubstrate; forming a dielectric layer covering a surface of the substrate; forming aplurality of first through holes exposing the surface of the substrate by etching the

dielectric layer; forming first conductive vias by filling the plurality of first through holesusing a first metal material and first conductive lines on the first conductive vias alsousing the first metal material; forming a plurality of second through holes exposing thesurface of the substrate by etching the dielectric layer; and forming second conductivevias by filling the plurality of second through holes using a second metal material,different from the first metal material, and second conductive lines over the secondconductive vias also using the second metal material, wherein the second metal materialhas a different anti-electromigration ability from the first metal material.

申请人：Semiconductor Manufacturing International (Shanghai) Corporation

地址：Shanghai CN

国籍：CN

更多信息请下载全文后查看