Volumetric integrated circuit and volumetric integ

专利名称：Volumetric integrated circuit and volumetric

integrated circuit manufacturing method

发明人：Daniel C. Edelstein,Michael A.

Gaynes,Thomas M. Shaw,Bucknell C.Webb,Roy R. Yu

申请号：US14221477申请日：20140321公开号：US09583410B2公开日：20170228

专利附图：

摘要：A volumetric integrated circuit manufacturing method is provided. The method

includes assembling a slab element of elongate chips, exposing a wiring layer betweenadjacent elongate chips of the slab element, metallizing a surface of the slab element atand around the exposed wiring layer to form a metallized surface electrically coupled tothe wiring layer and passivating the metallized surface to hermetically seal themetallized surface.

申请人：International Business Machines Corporation

地址：Armonk NY US

国籍：US

代理机构：Cantor Colburn LLP

代理人：Louis Percello

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