Non-volatile memory with local boosting control im

专利名称：Non-volatile memory with local boosting

control implant

发明人：Fumitoshi Ito申请号：US11536416申请日：20060928公开号：US07705387B2公开日：20100427

专利附图：

摘要：A substrate of a non-volatile storage system includes selected regions in whichadditional ions are deeply implanted during the fabrication process. NAND strings areformed over the selected regions such that end word lines of the NAND strings are over

the deeply implanted ions. The presence of the deeply implanted ions below the endword lines increases a channel capacitance of the substrate under the end word lines. Dueto the increased capacitance, boosting of a channel in the substrate below the end wordlines is reduced, thereby reducing the occurrence of gate induced drain leakage (GIDL)and band-to-band tunneling (BTBT) and, consequently, program disturb. A shallow ionimplantation may also be made to set a threshold voltage of storage elements of theNAND string.

申请人：Fumitoshi Ito

地址：Yokohama JP

国籍：JP

代理机构：Vierra Magen Marcus & DeNiro LLP

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