BTS410F2资料

PROFET® BTS 410 F2

Smart Highside Power Switch

Features

• Overload protection• Current limitation

• Short circuit protection• Thermal shutdown

• Overvoltage protection (including load dump)• Fast demagnetization of inductive loads• Reverse battery protection1)

• Undervoltage and overvoltage shutdown withauto-restart and hysteresis• Open drain diagnostic output• Open load detection in ON-state• CMOS compatible input

• Loss of ground and loss of Vbb protection• Electrostatic discharge (ESD) protection

Product SummaryOvervoltage protectionOperating voltageOn-state resistanceLoad current (ISO)Current limitationVbb(AZ)Vbb(on)RONIL(ISO)IL(SCr)65V4.7 ... 42V220mΩ1.8A2.7ATO-220AB/551Straight leads515StandardSMDApplication

• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads• Most suitable for inductive loads

• Replaces electromechanical relays, fuses and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnosticfeedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protectionfunctions.

+ Vbb3VoltagesourceOvervoltageprotectionCurrentlimitGateprotectionVLogicVoltagesensorCharge pumpLevel shifterRectifierOpen loadESDLogicdetectionLimit forunclampedind. loadsOUT2INTemperaturesensor5Load4STShort circuitdetectionGND®PROFETLoad GND1Signal GND 1)With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistors in series with IN and ST

connections, reverse load current limited by connected load.

Semiconductor Group103.97

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BTS 410 F2

Pin12345SymbolGNDINVbbSTOUT(Load, L)-I+SOFunctionLogic groundInput, activates the power switch in case of logical high signalPositive power supply voltage,the tab is shorted to this pinDiagnostic feedback, low on failureOutput to the loadMaximum Ratings at Tj = 25 °C unless otherwise specifiedParameterSupply voltage (overvoltage protection see page 3)Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 Ω, RL= 6.6 Ω, td= 400 ms, IN= low or highLoad current (Short circuit current, see page 4)Operating temperature rangeStorage temperature rangePower dissipation (DC), TC ≤ 25 °CInductive load switch-off energy dissipation, single pulse Vbb= 12V, Tj,start = 150°C, TC = 150°C const. IL = 1.8 A, ZL = 2.3 H, 0 Ω:Electrostatic discharge capability (ESD)IN: (Human Body Model)all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993Input voltage (DC)Current through input pin (DC)Current through status pin (DC)see internal circuit diagrams page 6SymbolVbbVLoad dump4)Values65100self-limited-40 ...+150-55 ...+150504.512-0.5 ... +6±5.0±5.0UnitVVA°CWJkVVmAILTjTstgPtotEASVESDVINIINISTThermal CharacteristicsParameter and ConditionsThermal resistanceSymbolchip - case:RthJCjunction - ambient (free air):RthJASMD version, device on PCB5):min------Valuestypmax--2.5--7535--UnitK/W 2)Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a

150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for theprotection of the input is integrated.

3)R = internal resistance of the load dump test pulse generator

I

4)VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

5)Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for V

bb

connection. PCB is vertical without blown air.

Semiconductor Group2

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BTS 410 F2

Electrical Characteristics

Parameter and Conditionsat Tj = 25 °C, Vbb = 12 V unless otherwise specifiedSymbolValuesmintypmaxUnitLoad Switching Capabilities and CharacteristicsTj=25 °C:Tj=150 °C: Nominal load current, ISO Norm (pin 3 to 5)VON = 0.5 V, TC = 85 °COutput current (pin 5) while GND disconnected orGND pulled up, Vbb=30 V, VIN= 0, see diagrampage 7, Tj =-40...+150°CTurn-on time IN to 90% VOUT: to 10% VOUT:Turn-off timeIN RL = 12 Ω, Tj =-40...+150°CSlew rate on 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°CSlew rate off 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°COperating ParametersOperating voltage 6) Undervoltage shutdown On-state resistance (pin 3 to 5) IL = 1.6 ARON--190390220440--1mΩIL(ISO)IL(GNDhigh)tontoffdV /dton-dV/dtoff1.6--1.8--AmA125------------1258536µsV/µsV/µsTj =-40...+150°C:Tj =25°C:Tj =-40...+150°C:Tj =-40...+150°C:Undervoltage restart Undervoltage restart of charge pump see diagram page 12Undervoltage hysteresis∆Vbb(under) = Vbb(u rst) - Vbb(under)Tj =-40...+150°C:Overvoltage shutdown Tj =-40...+150°C:Overvoltage restart Tj =-40...+150°C:Overvoltage hysteresis Tj =-40...+150°C:Overvoltage protection7) Ibb=4 mATj=-40...+25°C:Standby current (pin 3)Tj= 150°C: VIN=0Leakage output current (included in Ibb(off))VIN=0 Operating current (Pin 1)8), VIN=5 V,Tj =-40...+150°CVbb(on)Vbb(under)Vbb(u rst)Vbb(ucp)∆Vbb(under)4.72.92.7------4240--65----------------5.60.1----0.1701018--1424.54.74.96.0--52------1525202.1VVVVVVVVVµAµAmAVbb(over)Vbb(o rst)∆Vbb(over)Vbb(AZ)Ibb(off)IL(off)IGND 6)At supply voltage increase up to V= 5.6 V typ without charge pump, VbbOUT ≈Vbb - 2 V

7)Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 6.

Semiconductor Group3

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BTS 410 F2

Protection FunctionsInitial peak short circuit current limit (pin 3 to 5)9),( max 450 µs if VON > VON(SC) )Tj =-40°C:Tj =25°C:Tj =+150°C:Overload shutdown current limit VON= 8 V, Tj = Tjt (see timing diagrams, page 10)Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150°C: min value valid only, if input \"low\" time exceeds 60 µsOutput clamp (inductive load switch off)at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C:IL= 1 A, Tj =-40..+150°C:Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperatureThermal hysteresisReverse battery (pin 3 to 1) 10)Diagnostic CharacteristicsOpen load detection current (on-condition)Input and Status Feedback11)Input turn-on threshold voltage IL(SCp)4.03.52.0--5.53.52.7--68--8.5--10--11107.5--4507375------32AIL(SCr)--AµsVtd(SC)--61----150----VON(CL)VON(SC)Tjt∆Tjt-VbbV°CKVTj=-40 ..150°C:IL (OL)2--150mASemiconductor Group4

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BTS 410 F2

Truth TableInput-levelNormaloperationOpen loadShort circuitto GNDShort circuitto VbbOvertem-peratureUnder-voltageOvervoltageL = \"Low\" LevelH = \"High\" Level

LHLHLHLHLHLHLHOutputlevelLH412B2HHLHHLLHLLL14)L14)LLStatus410D2HHHLHLHH (L13))LLL14)L14)LL410E2/F2HHHLHLHH (L13))LLHHHH410G2HHHLHHHH (L13))LLHHHH410H2HHLHHLLHLLHHHH12)HLLHHLLLLLLX = don't careZ = high impedance, potential depends on external circuitStatus signal after the time delay shown in the diagrams (see fig 5. page 11...12)

12)Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for

open load detection.

13)Low resistance short V to output may be detected in ON-state by the no-load-detection

bb

14)No current sink capability during undervoltage shutdown

Semiconductor Group5

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BTS 410 F2

Terms

IbbIIN2ISTVVbbRINVST4STGND1GNDIGNDVOUTOUTShort circuit detection

Fault Condition: VON > 8.5 V typ.; IN high

3INVbbILPROFETOUT5VONVON+ VbbLogicunitShort circuitdetectionInput circuit (ESD protection)

RINIInductive and overvoltage output clamp

+ VbbVZESD-ZDI1ZDI2GNDVONIIOUTGND

PROFET

ZDI1 6 V typ., ESD zener diodes are not to be used as

voltage clamp at DC conditions. Operation in this modeV clamped to 68 V typ.

ON

may result in a drift of the zener voltage (increase of upto 1 V).

Overvolt. and reverse batt. protection

Status output

V+ VbbZ2+5VRININRST(ON)LogicSTRSTSTVZ1PROFETGNDGNDESD-ZDRGNDSignal GNDESD-Zener diode: 6 V typ., max 5 mA;

RST(ON) < 250 Ω at 1.6 mA, ESD zener diodes are notVZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 Ω, RIN,to be used as voltage clamp at DC conditions.RST= 15 kΩOperation in this mode may result in a drift of the zenervoltage (increase of up to 1 V).

Semiconductor Group6

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BTS 410 F2

Open-load detection

ON-state diagnostic condition: VON < RON * IL(OL); INhigh

+ VbbVbb disconnect with energized inductiveload3high2INVbbPROFETOUTONVON54STGND1OUTLogicunitOpen loaddetectionVbbNormal load current can be handled by the PROFETitself.GND disconnect

3INVbbPROFET4VbbVINVSTSTGND1VGNDOUTVbb disconnect with charged externalinductive loadShigh2IN3VbbPROFETOUT25D54STGND1VbbAny kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .Due to VGND >0, no VST = low signal available.

If other external inductive loads L are connected to the PROFET,additional elements like D are necessary.GND disconnect with GND pull up

3INVbbPROFET4STGND1VVbbVINSTVOUTInductive Load switch-off energydissipationEbbEASVbbPROFETOUTELZLELoad25IN=STGNDGND{LRLERAny kind of load. If VGND > VIN - VIN(T+) device stays offDue to VGND >0, no VST = low signal available.

Energy stored in load inductance:EL = 1/2·L·ILWhile demagnetizing load inductance, the energydissipated in PROFET is EAS= Ebb + EL - ER= ∫ VON(CL)·iL(t) dt,2Semiconductor Group7

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BTS 410 F2

with an approximate solution for RL > 0 Ω:

IL·LIL·RL·(Vbb + |VOUT(CL)|)· ln (1+ EAS= )|VOUT(CL)|2·RL

Maximum allowable load inductance for

a single switch off

L = f (IL ); Tj,start = 150°C,TC = 150°C const.,Typ. transient thermal impedance chip caseZthJC = f(tp, D), D=tp/TZthJC [K/W]

Vbb = 12 V, RL = 0 Ω

L [mH]

10000

1000

100

1.5

1.75

2

2.25

2.5

2.75

3

IL [A]

Semiconductor Group8

10

1

D=0.50.1

0.20.10.050.020.0100.01

1E-5

1E-41E-31E-21E-11E01E1

tp [s]

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BTS 410 F2

Options Overview

all versions: High-side switch, Input protection, ESD protection, load dump andreverse battery protection with 150 Ω in GND connection, protection against loss ofgroundTypeLogic versionBTS412 B2410D2410E2410F2410G2410H2BXDXXEFXXXXXXXXXXXXXXXXXXXXXXXX-18)XXXXXXXXXXXXXXX-18)X--XXXXX-18)X--XXXX--18)X--XXXXXX--X-XXXXX-XXXXXX--XXGHXXXX307308Overtemperature protection with hysteresisTj >150 °C, latch function15)16)Tj >150 °C, with auto-restart on coolingShort circuit to GND protectionswitches off when VON>3.5 V typ. and Vbb> 7 Vtyp15) (when first turned on after approx. 150 µs)switches off when VON>8.5 V typ.15)(when first turned on after approx. 150 µs)Achieved through overtemperature protectionOpen load detectionin OFF-state with sensing current 30 µA typ.in ON-state with sensing voltage drop acrosspower transistorXUndervoltage shutdown with auto restartOvervoltage shutdown with auto restart17)Status feedback forovertemperatureshort circuit to GNDshort to Vbbopen loadundervoltageovervoltageStatus output typeCMOSOpen drainOutput negative voltage transient limit (fast inductive load switch off)to Vbb - VON(CL)XXXXXXXXXXXXXXXXXXXXXXXXLoad current limithigh level (can handle loads with high inrush currents)low level (better protection of application)Protection against loss of GND 15)Latch except when V-Vbb OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠

0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latchbetween turn on and td(SC).

16)With latch function. Reseted by a) Input low, b) Undervoltage17)No auto restart after overvoltage in case of short circuit

18)Low resistance short V to output may be detected in ON-state by the no-load-detection

bb

Semiconductor Group9

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BTS 410 F2

Timing diagramsFigure 1a: Vbb turn on:

INFigure 3a: Turn on into short circuit,

INVbbtd(bb IN)STVOUTVOUTtd(SC)AST open draintAin case of too early VIN=high the device may not turn on (curve A)td(bb IN) approx. 150 µs

ILttd(SC) approx. -- µs if Vbb - VOUT > 8.5 V typ.

Figure 2a: Switching an inductive load

Figure 3b: Turn on into overload,

ININtST*)d(ST)ILIL(SCp)IL(SCr)VOUTILIL(OL)t*) if the time constant of load is too large, open-load-status mayoccur

STtHeating up may require several seconds,Vbb - VOUT < 8.5 V typ.

Semiconductor Group10

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BTS 410 F2

Figure 3c: Short circuit while on:

Figure 5a: Open load: detection in ON-state, turnon/off to open load

IN

IN

ST

ST

t

d(ST)

VOUT

V

OUT

IL

**)

t

I

L

open

t

**) current peak approx. 20 µs

Figure 4a: Overtemperature,Reset if (IN=low) and (TjFigure 5b: Open load: detection in ON-state, openload occurs in on-state

IN

INtd(ST OL1)

ST

STt

d(ST OL2)

V

VOUTOUT

TI

normal

L

open

normal

Jt

t td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ

*) ST goes high , when VIN=low and TjSemiconductor Group11

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BTS 410 F2

Figure 6a: Undervoltage:Figure 7a: Overvoltage:

ININVbbVbb(under)VbbVbb(u cp)Vbb(u rst)VVON(CL)Vbb(over)Vbb(o rst)OUTVOUTST open draintSTtFigure 6b: Undervoltage restart of charge pump

VonVON(CL)Figure 9a: Overvoltage at short circuit shutdown:

INVbbVbb(o rst)off-stateon-stateoff-stateVOutput short to GNDVOUTshort circuit shutdownbb(over)Vbb(u rst)Vbb(o rst)ILVVbb(under)bb(u cp)STVbbtOvervoltage due to power line inductance. No overvoltage auto-restart of PROFET after short circuit shutdown.

charge pump starts at Vbb(ucp) =5.6 V typ.

Semiconductor Group12

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BTS 410 F2

Package and Ordering CodeAll dimensions in mmSMD TO-220AB/5, Opt. E3062 Ordering codeBTS410F2 E3062AT&R:Q67060-S6103-A4Standard TO-220AB/5BTS 410 F2Ordering codeQ67060-S6103-A2TO-220AB/5, Option E3043 Ordering codeBTS 410 F2 E3043Q67060-S6103-A3Changed since 04.96DateChangeMar.EAS maximum rating and diagram1997and ZthJC diagram addedESD capability (except Input)specified to 2kV, RthJA SMDspecifiedIL(GND high) max reduced from 10 to1 mAOption Overview table columns forBTS307/308 addedFig. 1a: Vout-spike at Vbb-turn-onaddedSemiconductor Group13