Structure, structure manufacturing method and sens

专利名称：Structure, structure manufacturing method

and sensor using the same

发明人：Atsushi Mukai申请号：US11067661申请日：20050228

公开号：US20050170494A1公开日：20050804

摘要：A plasmon resonance device according to an example of a structure is

characterized in that metallic particles isolated from each other are formed in each of aplurality of pores of anodic oxidized alumina As a method of manufacturing the plasmonresonance device a metal is coated on the anodic oxidized alumina opening the pores anda metal coated element provided on the opening surface of the pore in the anodicoxidized alumina is removed. Consequently, metallic particles isolated from each otherare formed in the respective independent pores. The plasmon resonance device can beused as a sensor utilizing a localized plasmon resonance phenomenon.

申请人：Atsushi Mukai

地址：Kanagawa JP

国籍：JP

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