Dynamic ram-and semiconductor device

专利名称：Dynamic ram-and semiconductor device发明人：Hiroki Fujisawa,Riichiro Takemura,Koji Arai申请号：US11790772申请日：20070427

公开号：US20070195573A1公开日：20070823

专利附图：

摘要：A semiconductor memory includes a plurality of first regions arranged along afirst direction, each of which corresponds to a memory array including a plurality of wordlines, bit lines and memory cells. A plurality of second regions are provided each of whichis arranged alternately with respect to each of the first regions, and each including sense

amplifiers connected to said bit lines to form an open line type semiconductor memory.A third region is also provided that is a region not sandwiched by the second regions,wherein the third region includes a plurality of dummy bit lines.

申请人：Hiroki Fujisawa,Riichiro Takemura,Koji Arai

地址：Ome JP,Tokyo JP,Kodaira JP

国籍：JP,JP,JP

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