Dynamic ram-and semiconductor device

专利名称：Dynamic ram-and semiconductor device发明人：Hiroki Fujisawa,Riichiro Takemura,Koji Arai申请号：US10361642申请日：20030211

公开号：US20030112695A1公开日：20030619

专利附图：

摘要：There are provided a plurality of memory mats, including a plurality of bit lines,a plurality of word lines, and a plurality of memory cells coupled to the plurality of bitlines, and the plurality of word lines are provided in a direction of the bit line. A senseamplifier array including a plurality of latch circuits is provided in areas between the

memory mats arranged in the bit line direction, respectively, and a pair of input/outputnodes of which are connected to a pair of bit lines separately placed in the memory matson both sides of the area, respectively. In this case, for a general memory mat other thanboth end portions in the bit line direction, word lines in any one of the memory mats areactivated, while, for end memory mats provided on both end portions in the bit linedirection, word lines of both memory mats are activated together.

申请人：FUJISAWA HIROKI,TAKEMURA RIICHIRO,ARAI KOJI

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