Floating gate storage device and method of fabrica
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专利名称：Floating gate storage device and method of
fabrication
发明人：Phillip J. Salsbury,George Perlegos,William L.
Morgan
申请号：US05/792496申请日：19770502公开号：US04114255A公开日：19780919
摘要：A floating gate storage device in which the channel is maintained at a firstdoping concentration to provide a low threshold voltage and preselected portions orregions along the sides of the channel are maintained at a second higher dopingconcentration to enhance programming of the device. These regions are formed as partof the \"front- end\" processing of the substrate while forming channel stops, thus noadditional processing is required.
申请人：INTEL CORPORATION
代理机构：Blakely, Sokoloff, Taylor & Zafman
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