Memory device testing

专利名称：Memory device testing发明人：Ebrahim Abedifard申请号：US10192328申请日：20020710公开号：US06560150B2公开日：20030506

专利附图：

摘要：Memory devices having redundancy selection circuitry are adapted to introducetest input signals into the redundancy selection path. The memory devices include aredundancy selection circuit having a latch for latching an incoming redundancy matchsignal. The latch includes a pair of reverse-coupled inverters. The latch is further coupled

to receive one or more test input signals. The latch is responsive to one or more controlsignals to selectively generate the latched match signal from the incoming redundancymatch signal or one of the test input signals. Such latch circuits are useful for controllingselection of a redundant element in a memory device during testing without significantlyimpacting the speed path of the redundancy selection circuitry during normal operationof the memory device.

申请人：MICRON TECHNOLOGY, INC.

代理机构：Leffert Jay & Polglaze, P.A.

代理人：Thomas W. Leffert

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