RHP030N03T100;中文规格书,Datasheet资料

Transistors

4V Drive Nch MOSFET

RHP030N03

zStructure zDimensions (Unit : mm) Silicon N-channel MOSFET

MPT3

4.51.5 1.6zFeatures

1) Low On-resistance. 2) 4V drive.

0.4 0.50.40.4 1.51.53.0(1)GatezApplications (2)DrainSwitching Abbreviated symbol : KZ(3)Source(1)(2)(3)

zPackaging specifications

PackageTypeRHP030N03CodeBasic ordering unit (pieces)TapingT1001000(2)zInner circuit

(3)1.02.54.00.5 ∗2

zAbsolute maximum ratings (Ta=25°C)

ParameterDrain-source voltageGate-source voltageDrain currentReverse drain currentTotal power dissipationChannel temperatureRange of storage temperature∗1 Pw≤10µs, Duty cycle≤1%∗2 When mounted on a 40×40×0.7mm ceramic board∗1∗1 ESD PROTECTION DIODE(1)∗2 BODY DIODE(1) Source(2) Gate(3) DrainContinuousPulsedContinuousPulsedSymbolVDSSVGSSIDIDP∗1IDRIDRP∗1PDTchTstgLimits30±203103105002∗2150−55 to +150UnitVVAAAAmWW°C°C

zThermal resistance

ParameterChannel to ambient∗ When mounted on a 40×40×0.7mm ceramic boardSymbolRth(ch-a)Limits25062.5∗Unit°C/W°C/W

Rev.A 1/3

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RHP030N03

Transistors

zElectrical characteristics (Ta=25°C)

ParameterSymbolIGSSGate-source leakageDrain-source breakdown voltageV(BR) DSSIDSSZero gate voltage drain currentGate threshold voltageVGS (th)Static drain-source on-stateresistanceForward transfer admittanceInput capacitanceOutput capacitanceReverse transfer capacitanceTurn-on delay timeRise timeTurn-off delay timeFall timeTotal gate chargeGate-source chargeGate-drain charge∗PulsedRDS (on)∗YfsCissCossCrsstd (on)trtd (off)tfQgQgsQgd∗∗∗∗∗∗∗∗Min.−30−1.0−−2.0−−−−−−−−−−Typ.−−−−90160−1609027711154.56.51.01.5Max.±10−12.5120210−−−−−−−−−−−UnitµAVµAVmΩmΩSpFpFpFnsnsnsnsnCnCnCConditionsVGS=±20V, VDS=0VID= 1mA, VGS=0VVDS= 30V, VGS=0VVDS= 10V, ID= 1mAID= 3A, VGS= 10VID= 3A, VGS= 4VVDS= 10V, ID= 3AVDS= 10VVGS=0Vf=1MHzVDD 15VID= 1.5AVGS= 10VRL=10ΩRG=10ΩVDD 15VVGS= 10VID= 3A Rev.A 2/3

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RHP030N03

Transistors

zElectrical characteristics curves

1000Ta=25°Cf=1MHzVGS=0VCiss1000CAPACITANCE : C (pF)DRAIN CURRENT : ID (A)SWITCHING TIME : t (ns)100CossCrssTa=25°CVDD= 15VVGS= 10VRG=10ΩPulsed10VDS=10VPulsedTa=125°C75°C25°C−25°C1001tftd (off)1010td (on)tr0.110.010.1110100DRAIN-SOURCE VOLTAGE : VDS (V)10.010.010.111000.511.522.533.5DRAIN CURRENT : ID (A)GATE-SOURCE VOLTAGE : VGS (V)Fig.1 Typical Capacitance vs. Drain-Source VoltageFig.2 Switching Characteristics

0.5Fig.3 Typical Transfer Characteristics

10REVERSE DRAIN CURRENT : IDR (A)STATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS (on) (Ω)0.4ID=3.0A1Ta=125°CTa=75°CTa=25°CTa= −25°CREVERSE DRAIN CURRENT : IDR (A)Ta=25°CPulsedVGS=0VPulsed10Ta=25°CPulsed1VGS=10V0.31.5A0.10.10V0.20.010.010.10024681012140.00100.20.40.60.811.21.40.00100.20.40.60.811.2GATE-SOURCE VOLTAGE : VGS (V)SOURCE-DRAIN VOLTAGE : VSD (V)SOURCE-DRAIN VOLTAGE : VSD (V)

Fig.4 Static Drain-SourceOn-State Resistance vs. Gate-Source VoltageFig.5 Reverse Drain Current vs.Source-Drain Voltage ( Ι )Fig.6 Reverse Drain Current vs.Source-Drain Voltage ( ΙΙ )

STATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS (on) (Ω)VGS=10VPulsedTa=125°CTa=75°CTa=25°CTa= −25°CGATE THRESHOLD VOLTAGE : VGS (th) (V)STATIC DRAIN-SOURCEON-STATE RESISTANCE : RDS (on) (Ω)11VGS=4VPulsed2.52VSD=10VID=1mAPulsed1.50.10.1Ta=125°CTa=75°CTa=25°CTa= −25°C10.50-500.010.010.11100.010.010.1110-250255075100125150DRAIN CURRENT : ID (A)DRAIN CURRENT : ID (A)CHANNEL TEMPERATURE : Tch (°C)Fig.7 Static Drain-SourceOn-State Resistancevs. Drain Current ( Ι )Fig.8 Static Drain-SourceOn-State Resistancevs. Drain Current ( ΙΙ )Fig.9 Gate Threshold Voltage vs. Channel Temperature Rev.A 3/3

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Appendix

NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be separately delivered.Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuitsand deciding upon circuit constants in the set.Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of anythird party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices.Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer.Products listed in this document are no antiradiation design.The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys).Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.About Export Control Order in JapanProducts described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade ControlOrder in Japan.In case of export from Japan, please confirm if it applies to \"objective\" criteria or an \"informed\" (by MITI clause)on the basis of \"catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

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RHP030N03T100