Integrated circuit with a capacitive structure and

专利名称：Integrated circuit with a capacitive structure

and method of fabricating the same

发明人：Gnade, Bruce F.,Summerfelt, Scott R.,Kirlin,

Peter (nmi)

申请号：EP97308617.6申请日：19971027公开号：EP0838852A2公开日：19980429

专利附图：

摘要：A capacitive structure on an integrated circuit and a method of making the sameare disclosed, which is particularly useful in random-access memory devices. Generally,

the method of the present invention comprises the steps of forming a substantiallyvertical temporary support (preferably by forming a cylindrical aperture in aninsulating layer) on a semiconductor substrate 10 and forming a substantially verticaldielectric film 32 (preferably a high dielectric constant perovskite-phase dielectric film,and more preferably barium strontium titanate) on a temporary support . The methodfurther comprises depositing a first conductive (e.g. platinum) electrode 60 on

substantially vertical dielectric film 32, and subsequently replacing temporary support with a second conductive (e.g.platinum) electrode , such that a thin film capacitor 44which is substantially vertical with respect to substrate 10 is formed. The entire capacitoris essentially self-aligned, such that some embodiments require only one lithographystep to complete the capacitor. Also, an advantage of this method is that a hightemperature, high oxygen activity dielectric deposition may be completed prior toformation of either electrode, thus greatly simplifying both electrode structure andprocessing.

申请人：TEXAS INSTRUMENTS INCORPORATED

地址：13500 North Central Expressway Dallas Texas 75265 US

国籍：US

代理机构：Darby, David Thomas

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