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Integrated circuit with a capacitive structure and

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专利名称:Integrated circuit with a capacitive structure

and method of fabricating the same

发明人:Gnade, Bruce F.,Summerfelt, Scott R.,Kirlin,

Peter (nmi)

申请号:EP97308617.6申请日:19971027公开号:EP0838852A2公开日:19980429

专利附图:

摘要:A capacitive structure on an integrated circuit and a method of making the sameare disclosed, which is particularly useful in random-access memory devices. Generally,

the method of the present invention comprises the steps of forming a substantiallyvertical temporary support (preferably by forming a cylindrical aperture in aninsulating layer) on a semiconductor substrate 10 and forming a substantially verticaldielectric film 32 (preferably a high dielectric constant perovskite-phase dielectric film,and more preferably barium strontium titanate) on a temporary support . The methodfurther comprises depositing a first conductive (e.g. platinum) electrode 60 on

substantially vertical dielectric film 32, and subsequently replacing temporary support with a second conductive (e.g.platinum) electrode , such that a thin film capacitor 44which is substantially vertical with respect to substrate 10 is formed. The entire capacitoris essentially self-aligned, such that some embodiments require only one lithographystep to complete the capacitor. Also, an advantage of this method is that a hightemperature, high oxygen activity dielectric deposition may be completed prior toformation of either electrode, thus greatly simplifying both electrode structure andprocessing.

申请人:TEXAS INSTRUMENTS INCORPORATED

地址:13500 North Central Expressway Dallas Texas 75265 US

国籍:US

代理机构:Darby, David Thomas

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