Integrated capacitor structure

专利名称：Integrated capacitor structure发明人：Peter Baumgartner,Phillip Riess申请号：US11541434申请日：20060929公开号：US07557426B2公开日：20090707

专利附图：

摘要：A semiconductor component including an integrated capacitor structure havingat least two groups of at least partly electrically conductive planes and which ispatterned in such a way that in at least each group of planes at least one plane has aplurality of strip elements, first strip elements including a first polarity of the capacitor

structure and second strip elements including a second polarity of the capacitorstructure, the first strip elements together with second strip elements being at leastpartly interlinked in one another and strip elements of the same polarity at least partlyoverlapping in at least two planes, the first group of planes being electricallyconductively connected by way of vertical connections (vias) to strip elements of thesame polarity of the second group of planes, the strip elements of the same polarity ofthe second group of planes being interconnected with lateral connecting elements.

申请人：Peter Baumgartner,Phillip Riess

地址：Munich DE,Munich DE

国籍：DE,DE

代理机构：Schwegman, Lundberg & Woessner, P.A.

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